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Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

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Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...

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Autores principales: Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Ambartsumov, M. G., Амбарцумов, М. Г., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
Formato: Статья
Lenguaje:English
Publicado: Institute of Electrical and Electronics Engineers Inc. 2018
Materias:
Aluminum coatings
Atomic layer deposition
Epitaxial growth
Refractive index
Oxide films
Aluminum nitride
Acceso en línea:https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3039
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