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Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters

Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman sp...

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Bibliografski detalji
Glavni autori: Devitsky, O. V., Девицкий, О. В., Sysoev, I. A., Сысоев, И. А.
Format: Статья
Jezik:English
Izdano: Maik Nauka-Interperiodica Publishing 2018
Teme:
Online pristup:https://www.scopus.com/record/display.uri?eid=2-s2.0-85015698172&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=a20179987da189f242377a00100f366c&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Pulsed+laser+deposition+of%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3069
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