Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters
Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman sp...
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