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Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters

Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters

Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman sp...

詳細記述

保存先:
書誌詳細
主要な著者: Devitsky, O. V., Девицкий, О. В., Sysoev, I. A., Сысоев, И. А.
フォーマット: Статья
言語:English
出版事項: Maik Nauka-Interperiodica Publishing 2018
主題:
Pulsed laser
Photoelectric converters
オンライン･アクセス:https://www.scopus.com/record/display.uri?eid=2-s2.0-85015698172&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=a20179987da189f242377a00100f366c&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Pulsed+laser+deposition+of%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3069
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85015698172&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=a20179987da189f242377a00100f366c&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Pulsed+laser+deposition+of%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3069

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