Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...
محفوظ في:
المؤلفون الرئيسيون: | Tarala, V. A., Тарала, В. А., Ambartsumov, M. G., Амбарцумов, М. Г., Altakhov, A. S., Алтахов, А. С., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю. |
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التنسيق: | Статья |
اللغة: | English |
منشور في: |
Elsevier B.V.
2018
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الموضوعات: | |
الوصول للمادة أونلاين: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3166 |
الوسوم: |
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مواد مشابهة
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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
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منشور في: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
بواسطة: Tarala, V. A., وآخرون
منشور في: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
بواسطة: Tarala, V. A., وآخرون
منشور في: (2018) -
Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
بواسطة: Tarala, V. A., وآخرون
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The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
بواسطة: Ambartsumov, M. G., وآخرون
منشور في: (2019)