Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...

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Bibliografiset tiedot
Päätekijät:	Tarala, V. A., Тарала, В. А., Ambartsumov, M. G., Амбарцумов, М. Г., Altakhov, A. S., Алтахов, А. С., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
Aineistotyyppi:	Статья
Kieli:	English
Julkaistu:	Elsevier B.V. 2018
Aiheet:	A1. X-ray diffraction A3. Atomic layer epitaxy B1. Nitrides B2. Semiconducting aluminum compounds B2. Semiconducting III-V materials Aluminum nitride Aluminum coatings Atoms
Linkit:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3166
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