Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...
Gardado en:
| Главные авторы: | , , , , , , , , , |
|---|---|
| Formato: | Статья |
| Idioma: | English |
| Publicado: |
Elsevier B.V.
2018
|
| Темы: | |
| Acceso en liña: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3166 |
| Метки: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|
