Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...
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פריטים דומים
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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
מאת: Ambartsumov, M. G., и др.
יצא לאור: (2019)