Amorphous carbon buffer layers for separating free gallium nitride films
The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrate...
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| Aineistotyyppi: | Статья |
| Kieli: | English |
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Amorphous carbon buffer layers for separating free gallium nitride films
2018
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| Linkit: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85000443074&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=18&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3180 |
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85000443074&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=18&citeCnt=0&searchTerm=https://dspace.ncfu.ru/handle/20.500.12258/3180