Amorphous carbon buffer layers for separating free gallium nitride films
The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrate...
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Amorphous carbon buffer layers for separating free gallium nitride films
2018
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| ऑनलाइन पहुंच: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85000443074&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=18&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3180 |
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ir-20.500.12258-31802020-07-30T13:42:38Z Amorphous carbon buffer layers for separating free gallium nitride films Altakhov, A. S. Алтахов, А. С. Kasharina, L. A. Кашарина, Л. А. Tarala, V. A. Тарала, В. А. Nitride films Amorphous carbon buffer layers The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the “GaN film–Al2O3” substrate interface decreases, which facilitates separation of the GaN layers 2018-10-10T10:06:06Z 2018-10-10T10:06:06Z 2016 Статья Altakhov, A.S., Gorbunov, R.I., Kasharina, L.A., Latyshev, F.E., Tarala, V.A., Shreter, Y.G. Amorphous carbon buffer layers for separating free gallium nitride films // Technical Physics Letters. - 2016. - Volume 42. - Issue 11. - Pages 1076-1078 https://www.scopus.com/record/display.uri?eid=2-s2.0-85000443074&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=18&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/3180 en Technical Physics Letters application/pdf application/pdf Amorphous carbon buffer layers for separating free gallium nitride films |
| institution |
СКФУ |
| collection |
Репозиторий |
| language |
English |
| topic |
Nitride films Amorphous carbon buffer layers |
| spellingShingle |
Nitride films Amorphous carbon buffer layers Altakhov, A. S. Алтахов, А. С. Kasharina, L. A. Кашарина, Л. А. Tarala, V. A. Тарала, В. А. Amorphous carbon buffer layers for separating free gallium nitride films |
| description |
The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the “GaN film–Al2O3” substrate interface decreases, which facilitates separation of the GaN layers |
| format |
Статья |
| author |
Altakhov, A. S. Алтахов, А. С. Kasharina, L. A. Кашарина, Л. А. Tarala, V. A. Тарала, В. А. |
| author_facet |
Altakhov, A. S. Алтахов, А. С. Kasharina, L. A. Кашарина, Л. А. Tarala, V. A. Тарала, В. А. |
| author_sort |
Altakhov, A. S. |
| title |
Amorphous carbon buffer layers for separating free gallium nitride films |
| title_short |
Amorphous carbon buffer layers for separating free gallium nitride films |
| title_full |
Amorphous carbon buffer layers for separating free gallium nitride films |
| title_fullStr |
Amorphous carbon buffer layers for separating free gallium nitride films |
| title_full_unstemmed |
Amorphous carbon buffer layers for separating free gallium nitride films |
| title_sort |
amorphous carbon buffer layers for separating free gallium nitride films |
| publisher |
Amorphous carbon buffer layers for separating free gallium nitride films |
| publishDate |
2018 |
| url |
https://www.scopus.com/record/display.uri?eid=2-s2.0-85000443074&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=18&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3180 |
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