Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , |
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| التنسيق: | Статья |
| اللغة: | English |
| منشور في: |
Maik Nauka-Interperiodica Publishing
2018
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3404 |
| الوسوم: |
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