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Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to...

詳細記述

保存先:
書誌詳細
主要な著者: Altukhov, V. I., Алтухов, В. И., Kasyanenko, I. S., Касьяненко, И. С., Sankin, A. V., Санкин, А. В.
フォーマット: Статья
言語:English
出版事項: Maik Nauka-Interperiodica Publishing 2018
主題:
Schottky barrier
Metal–alloy
Current voltage characteristics
Silicon carbide
オンライン･アクセス:https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3404
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https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3404

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