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Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to...

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Главные авторы: Altukhov, V. I., Алтухов, В. И., Kasyanenko, I. S., Касьяненко, И. С., Sankin, A. V., Санкин, А. В.
格式: Статья
語言:English
出版: Maik Nauka-Interperiodica Publishing 2018
主題:
Schottky barrier
Metal–alloy
Current voltage characteristics
Silicon carbide
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https://dspace.ncfu.ru/handle/20.500.12258/3404
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https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3404

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