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Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)

Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)

Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with exp...

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Bibliographic Details
Main Authors: Altukhov, V. I., Алтухов, В. И., Bilalov, B. A., Билалов, Б. А., Sankin, A. V., Санкин, А. В., Filipova, S. V., Филипова, С. В.
Format: Статья
Language:English
Published: Sumy State University 2018
Subjects:
Schottky barrier
Metal-semiconductor transitions
Silicon carbide
Solid solutions
Volt-amper characteristics
Online Access:http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=27&SID=E57V5HcvS1OIs9XhLID&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/3467
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http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=27&SID=E57V5HcvS1OIs9XhLID&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/3467

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