Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)
Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with exp...
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| Príomhchruthaitheoirí: | , , , , , , , |
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| Formáid: | Статья |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Sumy State University
2018
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| Ábhair: | |
| Rochtain ar líne: | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=27&SID=E57V5HcvS1OIs9XhLID&page=1&doc=1 https://dspace.ncfu.ru/handle/20.500.12258/3467 |
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