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Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250°C and 280°C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however,...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Martens, V. Y., Мартенс, В. Я., Lisitsyn, S. V., Лисицын, С. В.
التنسيق: Статья
اللغة:English
منشور في: Institute of Physics Publishing 2018
الموضوعات:
Aluminum
Aluminum coatings
Aluminum nitride
Atomic layer deposition
Crystalline materials
Deposition
Electric discharges
Gas discharge tubes
Nitrides
Plasma theory
Film growth
الوصول للمادة أونلاين:https://www.scopus.com/record/display.uri?eid=2-s2.0-84957824585&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=5&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3686
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https://www.scopus.com/record/display.uri?eid=2-s2.0-84957824585&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=5&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3686

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