Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250°C and 280°C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however,...
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| Những tác giả chính: | , , , , , , , |
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| Định dạng: | Статья |
| Ngôn ngữ: | English |
| Được phát hành: |
Institute of Physics Publishing
2018
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84957824585&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=5&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3686 |
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