Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energ...
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| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
Maik Nauka Publishing / Springer SBM
2018
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| Linkit: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3689 |
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