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Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution

Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energ...

詳細記述

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書誌詳細
主要な著者: Altukhov, V. I., Алтухов, В. И., Kasyanenko, I. S., Касьяненко, И. С., Sankin, A. V., Санкин, А. В.
フォーマット: Статья
言語:English
出版事項: Maik Nauka Publishing / Springer SBM 2018
主題:
Current voltage characteristics
Interface states
Semiconductor metal boundaries
Silicon carbide
Surface defects
Schottky barrier diodes
オンライン･アクセス:https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3689
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https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3689

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