Modeling of the influence of defects on the electronic structure of silicon nanoclusters
Abstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon
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| Formato: | Статья |
| Idioma: | English |
| Publicado em: |
Maik Nauka Publishing / Springer SBM
2018
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| Acesso em linha: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84938559290&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=12&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3693 |
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