Modeling of the influence of defects on the electronic structure of silicon nanoclusters

Modeling of the influence of defects on the electronic structure of silicon nanoclusters

Abstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon

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Bibliografiske detaljer
Главные авторы:	Sokolenko, E. V., Соколенко, Е. В.
Format:	Статья
Sprog:	English
Udgivet:	Maik Nauka Publishing / Springer SBM 2018
Fag:	Defects Electronic structure Energy gap Silicon
Online adgang:	https://www.scopus.com/record/display.uri?eid=2-s2.0-84938559290&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=12&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3693
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