Modeling of the influence of defects on the electronic structure of silicon nanoclusters
Abstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon
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| Jazyk: | English |
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Maik Nauka Publishing / Springer SBM
2018
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