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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the...

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Päätekijät: Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Shevchenko, M. Y., Шевченко, М. Ю., Valyukhov, D. P., Валюхов, Д. П., Lisitsyn, S. V., Лисицын, С. В., Martens, V. Y., Мартенс, В. Я.
Aineistotyyppi: Статья
Kieli:English
Julkaistu: Maik Nauka Publishing / Springer SBM 2018
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Linkit:https://www.scopus.com/record/display.uri?eid=2-s2.0-84934342777&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=fe656e0c7517dbc25228b3d577bd000c&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=26&citeCnt=1&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3713
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