Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the...

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Hlavní autoři:	Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Shevchenko, M. Y., Шевченко, М. Ю., Valyukhov, D. P., Валюхов, Д. П., Lisitsyn, S. V., Лисицын, С. В., Martens, V. Y., Мартенс, В. Я.
Médium:	Статья
Jazyk:	English
Vydáno:	Maik Nauka Publishing / Springer SBM 2018
Témata:	Aluminum Aluminum nitride Atomic layer deposition Atoms Chemical vapor deposition Deposition Nitrides Refractive index Aluminum coatings
On-line přístup:	https://www.scopus.com/record/display.uri?eid=2-s2.0-84934342777&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=fe656e0c7517dbc25228b3d577bd000c&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=26&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3713
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record_format	dspace
spelling	ir-20.500.12258-37132020-09-14T14:21:55Z Growth of aluminum nitride films by plasma-enhanced atomic layer deposition Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Shevchenko, M. Y. Шевченко, М. Ю. Valyukhov, D. P. Валюхов, Д. П. Lisitsyn, S. V. Лисицын, С. В. Martens, V. Y. Мартенс, В. Я. Aluminum Aluminum nitride Atomic layer deposition Atoms Chemical vapor deposition Deposition Nitrides Refractive index Aluminum coatings Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the reactor purge time after exposure to trimethylaluminum vapor, and the plasma exposure time on the growth rate and composition of the films. Under the deposition conditions studied, the growth rate ranged from 0.1 to 0.26 nm per cycle and the refractive index of the films was 1.52 to 1.98. We obtained films with an aluminum to nitrogen atomic ratio near unity 2018-12-19T10:01:14Z 2018-12-19T10:01:14Z 2015 Статья Tarala, V.A., Altakhov, A.S., Shevchenko, M.Yu., Valyukhov, D.P., Lisitsyn, S.V., Martens, V.Ya. Growth of aluminum nitride films by plasma-enhanced atomic layer deposition // Inorganic Materials. - 2015. - Volume 51. - Issue 7. - Pages 728-735 https://www.scopus.com/record/display.uri?eid=2-s2.0-84934342777&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=fe656e0c7517dbc25228b3d577bd000c&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=26&citeCnt=1&searchTerm= http://hdl.handle.net/20.500.12258/3713 en Inorganic Materials application/pdf application/pdf Maik Nauka Publishing / Springer SBM
institution	СКФУ
collection	Репозиторий
language	English
topic	Aluminum Aluminum nitride Atomic layer deposition Atoms Chemical vapor deposition Deposition Nitrides Refractive index Aluminum coatings
spellingShingle	Aluminum Aluminum nitride Atomic layer deposition Atoms Chemical vapor deposition Deposition Nitrides Refractive index Aluminum coatings Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Shevchenko, M. Y. Шевченко, М. Ю. Valyukhov, D. P. Валюхов, Д. П. Lisitsyn, S. V. Лисицын, С. В. Martens, V. Y. Мартенс, В. Я. Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
description	Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the reactor purge time after exposure to trimethylaluminum vapor, and the plasma exposure time on the growth rate and composition of the films. Under the deposition conditions studied, the growth rate ranged from 0.1 to 0.26 nm per cycle and the refractive index of the films was 1.52 to 1.98. We obtained films with an aluminum to nitrogen atomic ratio near unity
format	Статья
author	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Shevchenko, M. Y. Шевченко, М. Ю. Valyukhov, D. P. Валюхов, Д. П. Lisitsyn, S. V. Лисицын, С. В. Martens, V. Y. Мартенс, В. Я.
author_facet	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Shevchenko, M. Y. Шевченко, М. Ю. Valyukhov, D. P. Валюхов, Д. П. Lisitsyn, S. V. Лисицын, С. В. Martens, V. Y. Мартенс, В. Я.
author_sort	Tarala, V. A.
title	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
title_short	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
title_full	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
title_fullStr	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
title_full_unstemmed	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
title_sort	growth of aluminum nitride films by plasma-enhanced atomic layer deposition
publisher	Maik Nauka Publishing / Springer SBM
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-84934342777&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=fe656e0c7517dbc25228b3d577bd000c&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=26&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3713
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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

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