Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
Aluminum nitride films have been grown by plasma-enhanced atomic layer deposition under self-limiting growth and CVD-like conditions. The films have been characterized by IR spectroscopy, ellipsometry, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the...
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| Главные авторы: | , , , , , , , , , , , |
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| Formato: | Статья |
| Idioma: | English |
| Publicado em: |
Maik Nauka Publishing / Springer SBM
2018
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| Assuntos: | |
| Acesso em linha: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84934342777&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=fe656e0c7517dbc25228b3d577bd000c&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=26&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3713 |
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