Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of...
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| Autores principales: | , , , , , , , |
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| Formato: | Статья |
| Lenguaje: | English |
| Publicado: |
Pleiades Publishing
2018
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| Acceso en línea: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85043483221&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=bd412f9ae61921f99b80d14c26f97e2e&sot=aff&sdt=sisr&sl=145&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60070961%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60026323%29&ref=%28Schottky-Barrier+Model+Nonlinear+in+Surface-State+Concentration+and+Calculation+of+the+I%E2%80%93V+Characteristics+of+Diodes+Based+on+SiC+and+Its+Solid+Solutions+in+the+Composite+Charge-Transport+Model%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/2754 |
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por Altukhov, V. I., Алтухов, В. И., Sankin, A. V., Санкин, А. В., Sysoev, D. K., Сысоев, Д. К., Yanukyan, E. G., Янукян, Э. Г.
Publicado 2018
Enlace del recursoPublicado 2018
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Статья