Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of...
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85043483221&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=bd412f9ae61921f99b80d14c26f97e2e&sot=aff&sdt=sisr&sl=145&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60070961%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60026323%29&ref=%28Schottky-Barrier+Model+Nonlinear+in+Surface-State+Concentration+and+Calculation+of+the+I%E2%80%93V+Characteristics+of+Diodes+Based+on+SiC+and+Its+Solid+Solutions+in+the+Composite+Charge-Transport+Model%29&relpos=0&citeCnt=0&searchTerm=https://dspace.ncfu.ru/handle/20.500.12258/2754