Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctions
The Schottky barrier heights in the М/n-(SiC)1–x(AlN)x systems are obtained on the assumption of a high density of surface states in the region of the metal (M) – SiC–AlN-solid solution contact. Current–voltage (I–V) characteristics of the Al/n-(SiC)1–x(AlN)x diodes are calculated. It is shown that...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , , , , , |
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| التنسيق: | Статья |
| اللغة: | English |
| منشور في: |
Springer
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85078030812&origin=resultslist&sort=plf-f&src=s&st1=Schotky+Barrier+Height+and+Calculation+of+Voltage&st2=&sid=1a92a68aaccc6341e8b7d4db7f649cec&sot=b&sdt=b&sl=64&s=TITLE-ABS-KEY%28Schotky+Barrier+Height+and+Calculation+of+Voltage%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11281 |
| الوسوم: |
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