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Ion-beam deposition of thin AlN films on Al2O3 substrate

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture com...

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Bibliografiske detaljer
Главные авторы: Devitsky, O. V., Девицкий, О. В., Sysoev, I. A., Сысоев, И. А., Kasyanov, I. V., Касьянов, И. В., Nikulin, D. A., Никулин, Д. А.
Format: Статья
Sprog:English
Udgivet: MAIK NAUKA/INTERPERIODICA/SPRINGER 2020
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https://dspace.ncfu.ru/handle/20.500.12258/11480
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