Skip to content
Ion-beam deposition of thin AlN films on Al2O3 substrate

Ion-beam deposition of thin AlN films on Al2O3 substrate

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture com...

Full description

Saved in:
Bibliographic Details
Main Authors: Devitsky, O. V., Девицкий, О. В., Sysoev, I. A., Сысоев, И. А., Kasyanov, I. V., Касьянов, И. В., Nikulin, D. A., Никулин, Д. А.
Format: Статья
Language:English
Published: MAIK NAUKA/INTERPERIODICA/SPRINGER 2020
Subjects:
Ion-beam deposition
Gallium nitride
Sapphire
Aluminum nitride
Wide-bandgap semiconductors
Online Access:http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/11480
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/11480

Similar Items