Ion-beam deposition of thin AlN films on Al2O3 substrate
Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture com...
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| Príomhchruthaitheoirí: | , , , , , , , |
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| Formáid: | Статья |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
MAIK NAUKA/INTERPERIODICA/SPRINGER
2020
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| Ábhair: | |
| Rochtain ar líne: | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1 https://dspace.ncfu.ru/handle/20.500.12258/11480 |
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