Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes
The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of...
Сохранить в:
| Главные авторы: | , , , |
|---|---|
| Format: | Статья |
| Sprog: | English |
| Udgivet: |
IOP Publishing Ltd
2020
|
| Fag: | |
| Online adgang: | https://dspace.ncfu.ru/handle/20.500.12258/14301 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|