Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes
The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of...
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| Hauptverfasser: | , , , |
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| Format: | Статья |
| Sprache: | English |
| Veröffentlicht: |
IOP Publishing Ltd
2020
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| Schlagworte: | |
| Online Zugang: | https://dspace.ncfu.ru/handle/20.500.12258/14301 |
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