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Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs

The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC-AlN series of electroluminescenc...

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Главные авторы: Sankin, A. V., Санкин, А. В., Altukhov, V. I., Алтухов, В. И.
Format: Статья
Jezik:English
Izdano: IOP Publishing Ltd 2021
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Online dostop:https://dspace.ncfu.ru/handle/20.500.12258/15488
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