THE GROWTH OF INALN/ SI HETEROSTRUCTURES WITH A HIGH CONTENT OF IN

THE GROWTH OF INALN/ SI HETEROSTRUCTURES WITH A HIGH CONTENT OF IN

InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN continuous films. Due to the mismatch of the lattice par...

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書目詳細資料
Главные авторы:	Lapin, V. A., Лапин, В. А., Kasyanov, I. V., Касьянов, И. В.
格式:	Статья
語言:	Russian
出版:	2023
主題:	Heteroepitaxy Heterostructures InAlN Ion-beam deposition Elemental analysis Scanning electron microscopy
在線閱讀:	https://dspace.ncfu.ru/handle/20.500.12258/23455
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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