THE GROWTH OF INALN/ SI HETEROSTRUCTURES WITH A HIGH CONTENT OF IN
InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN continuous films. Due to the mismatch of the lattice par...
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| Päätekijät: | , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | Russian |
| Julkaistu: |
2023
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| Aiheet: | |
| Linkit: | https://dspace.ncfu.ru/handle/20.500.12258/23455 |
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