Modeling of the influence of defects on the electronic structure of silicon nanoclusters

Modeling of the influence of defects on the electronic structure of silicon nanoclusters

Abstract The total and partial electron densities of states of defect-free and imperfect silicon clusters have been calculated by a semiempirical method. The local centers produced in the band gap of silicon by doping have been shown to be determined predominantly by the intrinsic states of silicon

में बचाया:

ग्रंथसूची विवरण
मुख्य लेखकों:	Sokolenko, E. V., Соколенко, Е. В.
स्वरूप:	Статья
भाषा:	English
प्रकाशित:	Maik Nauka Publishing / Springer SBM 2018
विषय:	Defects Electronic structure Energy gap Silicon
ऑनलाइन पहुंच:	https://www.scopus.com/record/display.uri?eid=2-s2.0-84938559290&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=12&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3693
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